Samsung 990 1 TB M.2 PCI Express 4.0 NVMe V-NAND

Name: Samsung 990 1 TB M.2 PCI Express 4.0 NVMe V-NAND
Brand: Samsung
SKU: MZ-V9V1T0BW
Price: 214.93 EUR
Availability: InStock

177.63 € bez PVN

Noliktavā · 27

Samsung 990, 1 TB, M.2, 7150 MB/s

Samsung 990. SDD diskdziņa kapacitāte: 1 TB, SSD formas standarts: M.2, Lasīšanas ātrums: 7150 MB/s, Rakstīšanas ātrums: 6450 MB/s, Komponente: PC (dators)

1 TB M.2 PCI Express 4.0
Lasīšanas ātrums: 7150 MB/s 700000 Ieejas/Izejas operācijas sekundē
Rakstīšanas ātrums: 6450 MB/s 1100000 Ieejas/Izejas operācijas sekundē
V-NAND NVMe 2.0
Aparatūras šifrēšana 256-bit AES, TCG Opal 2.0
S.M.A.R.T. atbalsts TRIM atbalsts
Komponente: PC (dators)

Specifikācija

Galvenie parametri
Saskarne	PCI Express 4.0
Garantija	3 mēn.
NVMe
Read speed	7150 MB/s
Memory type	V-NAND
Write speed	6450 MB/s
M.2 SSD size	2280 (22 x 80 mm)
NVMe version	2.0
SSD capacity	1 TB
TRIM support
Component for	PC
Operating shock	1500 G
SSD form factor	M.2
Operating voltage	3.3 V
Random read (4KB)	700000 IOPS
Random write (4KB)	1100000 IOPS
S.M.A.R.T. support
Hardware encryption
Security algorithms	256-bit AES, TCG Opal 2.0
PCI Express CEM revision	4.0
Power consumption (idle)	0.055 W
Power consumption (read)	4 W
Power consumption (write)	3.7 W
Operating temperature (T-T)	0 - 70 °C
DevSlp (device sleep) support
PCI Express interface data lanes	x4
Mean time between failures (MTBF)	1500000 h
Power consumption DevSlp (device sleep)	3 mW
Svars un izmēri
Depth	2.38 mm
Width	80.2 mm
Height	22.1 mm
Iepakojums
Iepakojuma tips	Box